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RN1427TE85LF

RN1427TE85LF

RN1427TE85LF

Toshiba Semiconductor and Storage

RN1427TE85LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1427TE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Base Part Number RN142*
Power - Max 200mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA 1V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 300MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.305514 $0.305514
10 $0.288221 $2.88221
100 $0.271907 $27.1907
500 $0.256516 $128.258
1000 $0.241996 $241.996

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