RN1441ATE85LF

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RN1441ATE85LF

Manufacturer part number:RN1441ATE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1441ATE85LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1441ATE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Packaging	Cut Tape (CT)
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	200mW
Polarity	NPN
Element Configuration	Single
Power - Max	200mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	100mV
Max Collector Current	300mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 4mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Collector Emitter Breakdown Voltage	20V
Voltage - Collector Emitter Breakdown (Max)	20V
Current - Collector (Ic) (Max)	300mA
Max Breakdown Voltage	20V
Frequency - Transition	30MHz
Emitter Base Voltage (VEBO)	25V
hFE Min	200
Resistor - Base (R1)	5.6 kOhms
Continuous Collector Current	300mA
RoHS Status	RoHS Compliant