RN1506(TE85L,F)

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RN1506(TE85L,F)

Manufacturer part number:RN1506(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1506(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1506(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Number of Pins	5
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	300mW
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Frequency	250MHz
Max Breakdown Voltage	50V
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	5V
hFE Min	80
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47k Ω
RoHS Status	RoHS Compliant