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RN1702JE(TE85L,F)

RN1702JE(TE85L,F)

RN1702JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

SOT-23

RN1702JE(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-553
Number of Pins 5
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 250MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 50
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.634427 $5.634427
10 $5.315497 $53.15497
100 $5.014620 $501.462
500 $4.730773 $2365.3865
1000 $4.462994 $4462.994

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