RN1710JE(TE85L,F)

new-10%

Manufacturer part number:RN1710JE(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:NPN X 2 BRT, Q1BSR=4.7K?, Q1BER=

Case Package:SOT-23

Datasheet:RN1710JE(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-553
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	BIP General Purpose Small Signal
Number of Elements	2
Power - Max	100mW
Polarity/Channel Type	NPN
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	250MHz
Power Dissipation-Max (Abs)	0.1W
Resistor - Base (R1)	4.7k Ω
RoHS Status	RoHS Compliant