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RN1902FE,LF(CT

RN1902FE,LF(CT

RN1902FE,LF(CT

Toshiba Semiconductor and Storage

RN1902FE,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1902FE,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 1k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.207631 $0.207631
10 $0.195878 $1.95878
100 $0.184791 $18.4791
500 $0.174331 $87.1655
1000 $0.164464 $164.464

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