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RN1906FE,LF(CT

  • RN1906FE,LF(CT
  • RN1906FE,LF(CT

RN1906FE,LF(CT

RN1906FE,LF(CT

Toshiba Semiconductor and Storage

RN1906FE,LF(CT datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1906FE,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 100mW
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.203676 $0.203676
10 $0.192148 $1.92148
100 $0.181271 $18.1271
500 $0.171011 $85.5055
1000 $0.161330 $161.33

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