Welcome to Hotenda.com Online Store!

logo
userjoin
Home

RN1906FE(T5L,F,T)

RN1906FE(T5L,F,T)

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

SOT-23

RN1906FE(T5L,F,T) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News