RN1907FE,LF(CT

new-10%

Manufacturer part number:RN1907FE,LF(CT

Manufacturer:Toshiba Semiconductor and Storage

Description:Es6 Pln(Lf), Bias Reistor Built-In Transistor (Brt)

Case Package:SOT-23

Datasheet:RN1907FE,LF(CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Weight	3.005049mg
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	100mW
Polarity	NPN
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	6V
hFE Min	80
Resistor - Base (R1)	10k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47k Ω
RoHS Status	RoHS Compliant