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RN1911FE,LF(CT

  • RN1911FE,LF(CT
  • RN1911FE,LF(CT

RN1911FE,LF(CT

RN1911FE,LF(CT

Toshiba Semiconductor and Storage

NPN X 2 BRT, Q1BSR=10K?, Q1BER=I

SOT-23

RN1911FE,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 10k Ω
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.238090 $0.23809
10 $0.224613 $2.24613
100 $0.211899 $21.1899
500 $0.199906 $99.953
1000 $0.188589 $188.589

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