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RN1911FETE85LF

RN1911FETE85LF

RN1911FETE85LF

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

SOT-23

RN1911FETE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.549175 $0.549175
10 $0.518089 $5.18089
100 $0.488764 $48.8764
500 $0.461097 $230.5485
1000 $0.434998 $434.998

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