RN1961(TE85L,F)

new-10%

Manufacturer part number:RN1961(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS 2NPN PREBIAS 0.2W US6

Case Package:SOT-23

Datasheet:RN1961(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	200mW
Number of Elements	2
Power - Max	200mW
Polarity/Channel Type	NPN
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Resistor - Base (R1)	4.7k Ω
Resistor - Emitter Base (R2)	4.7k Ω
RoHS Status	RoHS Compliant