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RN1963(TE85L,F)

RN1963(TE85L,F)

RN1963(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

SOT-23

RN1963(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Number of Elements 2
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.464698 $0.464698
10 $0.438394 $4.38394
100 $0.413580 $41.358
500 $0.390170 $195.085
1000 $0.368085 $368.085

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