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RN2105MFV,L3F(CT

  • RN2105MFV,L3F(CT
  • RN2105MFV,L3F(CT

RN2105MFV,L3F(CT

RN2105MFV,L3F(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

SOT-23

RN2105MFV,L3F(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SOT-723
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 150mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.037584 $0.037584
10 $0.035457 $0.35457
100 $0.033450 $3.345
500 $0.031557 $15.7785
1000 $0.029770 $29.77

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