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RN2107,LF(CT

RN2107,LF(CT

RN2107,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

SOT-23

RN2107,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -6V
hFE Min 80
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.227406 $0.227406
10 $0.214533 $2.14533
100 $0.202390 $20.239
500 $0.190934 $95.467
1000 $0.180127 $180.127

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