RN2107ACT(TPL3)

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RN2107ACT(TPL3)

Manufacturer part number:RN2107ACT(TPL3)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN2107ACT(TPL3) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN2107ACT(TPL3) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	100mW
Reach Compliance Code	unknown
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	150mV
Max Collector Current	80mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	150mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Frequency	200MHz
Max Breakdown Voltage	50V
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	6V
hFE Min	80
Resistor - Base (R1)	10 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47 k Ω
RoHS Status	RoHS Compliant