RN2112MFV,L3F | Datasheet PDF | Toshiba Semiconductor and Storage | Transistors - Bipolar (BJT) - Single, Pre-Biased | Hotenda

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RN2112MFV,L3F

Manufacturer part number:RN2112MFV,L3F

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS PREBIAS PNP 50V 0.1A VESM

Case Package:SOT-23

Datasheet:RN2112MFV,L3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-723
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	150mW
Transistor Type	PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Resistor - Base (R1)	22 k Ω

Quantity	Unit Price	Ext. Price
1	$0.168082	$0.168082
10	$0.158568	$1.58568
100	$0.149592	$14.9592
500	$0.141125	$70.5625
1000	$0.133137	$133.137

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