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RN2115,LF(CT

RN2115,LF(CT

RN2115,LF(CT

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

SOT-23

RN2115,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Packaging Cut Tape (CT)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -6V
hFE Min 50
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03623 $0.10869

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