RN2118MFV(TPL3)

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Manufacturer part number:RN2118MFV(TPL3)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans Digital BJT PNP 50V 100mA 3-Pin VESM T/R

Case Package:SOT-23

Datasheet:RN2118MFV(TPL3) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	150mW
Base Part Number	RN211*
Polarity	PNP
Element Configuration	Single
Power Dissipation	150mW
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Emitter Base Voltage (VEBO)	-25V
hFE Min	50
Resistor - Base (R1)	47 k Ω
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	10 k Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant