RN2131MFV,L3F

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RN2131MFV,L3F

Manufacturer part number:RN2131MFV,L3F

Manufacturer:Toshiba Semiconductor and Storage

Description:RN2131MFV,L3F datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN2131MFV,L3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-723
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	150mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Resistor - Base (R1)	100 k Ω
RoHS Status	RoHS Compliant