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RN2309(TE85L,F)

RN2309(TE85L,F)

RN2309(TE85L,F)

Toshiba Semiconductor and Storage

Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R

SOT-23

RN2309(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Base Part Number RN230*
Polarity PNP
Element Configuration Single
Power Dissipation 100mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 70
Resistor - Base (R1) 47 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 22 k Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.266954 $0.266954
10 $0.251844 $2.51844
100 $0.237588 $23.7588
500 $0.224140 $112.07
1000 $0.211453 $211.453

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