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RN2315TE85LF

RN2315TE85LF

RN2315TE85LF

Toshiba Semiconductor and Storage

Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R

SOT-23

RN2315TE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Base Part Number RN231*
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 100mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 50
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.563554 $0.563554
10 $0.531655 $5.31655
100 $0.501562 $50.1562
500 $0.473171 $236.5855
1000 $0.446388 $446.388

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