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RN2402S,LF

RN2402S,LF

RN2402S,LF

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased 50V VCBO 50V VCEO 100mA IC 200mW 4.7k

SOT-23

RN2402S,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 59
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Base Part Number RN240*
JESD-30 Code R-PDSO-G3
Number of Elements 1
Polarity PNP
Configuration SINGLE WITH BUILT-IN RESISTOR
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 10 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant

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