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RN2409,LF

RN2409,LF

RN2409,LF

Toshiba Semiconductor and Storage

RN2409,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN2409,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT)
Published 2016
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -15V
hFE Min 70
Resistor - Base (R1) 47 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 22 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03481 $0.10443

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