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RN2415(TE85L,F)

RN2415(TE85L,F)

RN2415(TE85L,F)

Toshiba Semiconductor and Storage

RN2415(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN2415(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Element Configuration Single
Power - Max 200mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -6V
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.276842 $0.276842
10 $0.261171 $2.61171
100 $0.246388 $24.6388
500 $0.232441 $116.2205
1000 $0.219284 $219.284

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