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RN2422TE85LF

RN2422TE85LF

RN2422TE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.8A SMINI

SOT-23

RN2422TE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 100mA 1V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 2.2 k Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.892804 $0.892804
10 $0.842268 $8.42268
100 $0.794592 $79.4592
500 $0.749616 $374.808
1000 $0.707185 $707.185

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