RN2427TE85LF

new-10%

Manufacturer part number:RN2427TE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans Digital BJT PNP 50V 800mA 3-Pin S-Mini T/R

Case Package:SOT-23

Datasheet:RN2427TE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO 4.55
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Power Dissipation	200mW
Transistor Application	SWITCHING
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	800mA
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 100mA 1V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 50mA
Collector Emitter Breakdown Voltage	50V
Max Frequency	200MHz
Transition Frequency	200MHz
Frequency - Transition	200MHz
Emitter Base Voltage (VEBO)	-6V
hFE Min	90
Resistor - Base (R1)	2.2 k Ω
Continuous Collector Current	-800mA
Resistor - Emitter Base (R2)	10 k Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant