RN2603(TE85L,F)

new-10%

Manufacturer part number:RN2603(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS 2PNP PREBIAS 0.3W SM6

Case Package:SOT-23

Datasheet:RN2603(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2001
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	300mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	200MHz
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Resistor - Base (R1)	22k Ω
Resistor - Emitter Base (R2)	22k Ω
RoHS Status	RoHS Compliant