RN2906,LF

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RN2906,LF

Manufacturer part number:RN2906,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:RN2906,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN2906,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Supplier Device Package	US6
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Polarity	PNP
Power - Max	200mW
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Collector Base Voltage (VCBO)	-50V
Emitter Base Voltage (VEBO)	-5V
hFE Min	80
Resistor - Base (R1)	4.7kOhms
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	47kOhms
Height	900μm
Length	2mm
Width	1.25mm
RoHS Status	RoHS Compliant