RN4910,LF

new-10%

Manufacturer part number:RN4910,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R

Case Package:SOT-23

Datasheet:RN4910,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Supplier Device Package	US6
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Polarity	NPN, PNP
Number of Channels	2
Power - Max	200mW
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Collector Base Voltage (VCBO)	50V
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Resistor - Base (R1)	4.7kOhms
Continuous Collector Current	100mA
Height	900μm
Length	2mm
Width	1.25mm
RoHS Status	RoHS Compliant