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RN4985,LF(CT

RN4985,LF(CT

RN4985,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

SOT-23

RN4985,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz 200MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.317075 $0.317075
10 $0.299128 $2.99128
100 $0.282196 $28.2196
500 $0.266223 $133.1115
1000 $0.251153 $251.153

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