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RN4985FE,LF(CT

  • RN4985FE,LF(CT
  • RN4985FE,LF(CT

RN4985FE,LF(CT

RN4985FE,LF(CT

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR2.2KOHM Q1BER

SOT-23

RN4985FE,LF(CT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz 200MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.213289 $0.213289
10 $0.201216 $2.01216
100 $0.189826 $18.9826
500 $0.179081 $89.5405
1000 $0.168945 $168.945

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