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RN4990(T5L,F,T)

RN4990(T5L,F,T)

RN4990(T5L,F,T)

Toshiba Semiconductor and Storage

Bipolar Transistors - Pre-Biased 100mA 50volts 6Pin 4.7Kohms

SOT-23

RN4990(T5L,F,T) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Packaging Cut Tape (CT)
Published 2013
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Max Power Dissipation 200mW
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 200mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz 200MHz
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.05313 $0.15939

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