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SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4.6A UFM

SOT-23

SSM3J129TU(TE85L) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSV
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
Element Configuration Single
Turn On Delay Time 32 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 46m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 102 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 8V
Height 700μm
Length 2.1mm
Width 1.7mm
Radiation Hardening No
RoHS Status RoHS Compliant

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