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SSM3K318T,LF

SSM3K318T,LF

SSM3K318T,LF

Toshiba Semiconductor and Storage

MOSFET N-Ch Sm Sig FET Id 2.5A 60V 20VGSS

SOT-23

SSM3K318T,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package TSM
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 107mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 2.8V
Drain to Source Breakdown Voltage 60V
Input Capacitance 235pF
Drain to Source Resistance 101mOhm
Rds On Max 107 mΩ
RoHS Status RoHS Compliant

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