SSM3K56CT,L3F

new-10%

Manufacturer part number:SSM3K56CT,L3F

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET NCH 20V 800MA CST3

Case Package:SOT-23

Datasheet:SSM3K56CT,L3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TA
Packaging	Tape & Reel (TR)
Published	2014
Series	U-MOSVII-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500mW Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	235m Ω @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	55pF @ 10V
Current - Continuous Drain (Id) @ 25°C	800mA Ta
Gate Charge (Qg) (Max) @ Vgs	1nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Continuous Drain Current (ID)	800mA
Drain Current-Max (Abs) (ID)	0.8A
DS Breakdown Voltage-Min	20V
RoHS Status	RoHS Compliant