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SSM6J51TUTE85LF

  • SSM6J51TUTE85LF
  • SSM6J51TUTE85LF

SSM6J51TUTE85LF

SSM6J51TUTE85LF

Toshiba Semiconductor and Storage

MOSFET P-CH 12V 4A UF6

SOT-23

SSM6J51TUTE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 54m Ω @ 2A, 2.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Drain to Source Voltage (Vdss) 12V
RoHS Status RoHS Compliant

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