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SSM6N56FE,LM

SSM6N56FE,LM

SSM6N56FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A

SOT-23

SSM6N56FE,LM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Power - Max 150mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 235mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 55pF @ 10V
Current - Continuous Drain (Id) @ 25°C 800mA
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 800mA
Input Capacitance 55pF
FET Feature Logic Level Gate, 1.5V Drive
Rds On Max 235 mΩ
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.08400 $0.336
8,000 $0.07560 $0.6048
12,000 $0.06720 $0.8064
28,000 $0.06300 $1.764
100,000 $0.05880 $5.88

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