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SSM6N67NU,LF

SSM6N67NU,LF

SSM6N67NU,LF

Toshiba Semiconductor and Storage

Trans MOSFET Array N-CH 30V 4A 6-Pin UDFN

SOT-23

SSM6N67NU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 2W Ta
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39.1m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.0391Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.8V Drive
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.13365 $0.40095
6,000 $0.12555 $0.7533
15,000 $0.11745 $1.76175
30,000 $0.11340 $3.402

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