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TDTC114E,LM

TDTC114E,LM

TDTC114E,LM

Toshiba Semiconductor and Storage

TDTC114E,LM datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TDTC114E,LM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 320mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.18000 $0.18
500 $0.1782 $89.1
1000 $0.1764 $176.4
1500 $0.1746 $261.9
2000 $0.1728 $345.6
2500 $0.171 $427.5

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