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TK11P65W,RQ

TK11P65W,RQ

TK11P65W,RQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 11.1A DPAK-0S

SOT-23

TK11P65W,RQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series DTMOSIV
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 100W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 450μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 300V
Current - Continuous Drain (Id) @ 25°C 11.1A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 11.1A
Input Capacitance 890pF
Rds On Max 440 mΩ
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.333054 $0.333054
10 $0.314202 $3.14202
100 $0.296417 $29.6417
500 $0.279638 $139.819
1000 $0.263811 $263.811

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