TK17E65W,S1X

new-10%

Manufacturer part number:TK17E65W,S1X

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 650V 17.3A TO-220AB

Case Package:SOT-23

Datasheet:TK17E65W,S1X Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2014
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	165W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 300V
Current - Continuous Drain (Id) @ 25°C	17.3A Ta
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	17.3A
RoHS Status	RoHS Compliant