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TK25E06K3,S1X(S

TK25E06K3,S1X(S

TK25E06K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A TO-220AB

SOT-23

TK25E06K3,S1X(S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series U-MOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
Power Dissipation 60W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 25A
Drain to Source Breakdown Voltage 60V
Drain to Source Resistance 14Ohm
Rds On Max 18 mΩ
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.602095 $3.602095
10 $3.398203 $33.98203
100 $3.205852 $320.5852
500 $3.024389 $1512.1945
1000 $2.853197 $2853.197

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