TK31E60W,S1VX

new-10%

Manufacturer part number:TK31E60W,S1VX

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC

Case Package:SOT-23

Datasheet:TK31E60W,S1VX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	230W Tc
Element Configuration	Single
Power Dissipation	230W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	88m Ω @ 15.4A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
Current - Continuous Drain (Id) @ 25°C	30.8A Ta
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	165 ns
Continuous Drain Current (ID)	30.8A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
FET Feature	Super Junction
RoHS Status	RoHS Compliant