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TK40E10K3,S1X(S

TK40E10K3,S1X(S

TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

SOT-23

TK40E10K3,S1X(S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Packaging Tube
Published 2009
Series U-MOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 147W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 147W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Ta
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 40A
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $1.54000 $77

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