TK55D10J1(Q)

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Manufacturer part number:TK55D10J1(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 100V 55A TO220W

Case Package:SOT-23

Datasheet:TK55D10J1(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220(W)
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	140W Tc
Element Configuration	Single
Power Dissipation	140W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10.5mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	55A Ta
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Continuous Drain Current (ID)	55A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	5.7nF
Drain to Source Resistance	10.5mOhm
Rds On Max	10.5 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free