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TK55S10N1,LQ

TK55S10N1,LQ

TK55S10N1,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

SOT-23

TK55S10N1,LQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature 175°C TJ
Packaging Cut Tape (CT)
Published 2015
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 157W Tc
Element Configuration Single
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 4V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 3280pF @ 10V
Current - Continuous Drain (Id) @ 25°C 55A Ta
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 55A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.535481 $2.535481
10 $2.391963 $23.91963
100 $2.256569 $225.6569
500 $2.128839 $1064.4195
1000 $2.008338 $2008.338

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