TK80S06K3L(T6L1,NQ

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Manufacturer part number:TK80S06K3L(T6L1,NQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 60V 80A DPAK-3

Case Package:SOT-23

Datasheet:TK80S06K3L(T6L1,NQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	DPAK+
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	U-MOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	100W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 10V
Current - Continuous Drain (Id) @ 25°C	80A Ta
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.2nF
Rds On Max	5.5 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant