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TK9A45D(STA4,Q,M)

TK9A45D(STA4,Q,M)

TK9A45D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 9A TO-220SIS

SOT-23

TK9A45D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Published 2010
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 770mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 800pF
Rds On Max 770 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $1.38320 $69.16

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