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TLP281-4(GB-TP,J,F

TLP281-4(GB-TP,J,F

TLP281-4(GB-TP,J,F

Toshiba Semiconductor and Storage

TLP281-4(GB-TP,J,F datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TLP281-4(GB-TP,J,F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 131 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 16-SOIC (0.173, 4.40mm Width)
Number of Pins 16
Operating Temperature -55°C~100°C
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 170mW
Voltage - Isolation 2500Vrms
Output Voltage 80V
Output Type Transistor
Number of Channels 4
Voltage 6V
Power Dissipation 170mW
Voltage - Forward (Vf) (Typ) 1.15V
Input Type DC
Forward Current 10mA
Max Output Voltage 80V
Output Current per Channel 50mA
Rise Time 2μs
Fall Time (Typ) 3 μs
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 80V
Rise / Fall Time (Typ) 2μs 3μs
Reverse Breakdown Voltage 5V
Max Input Current 50mA
Collector Emitter Saturation Voltage 400mV
Current Transfer Ratio (Min) 100% @ 5mA
Current Transfer Ratio (Max) 600% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Max Junction Temperature (Tj) 125°C
Reverse Voltage (DC) 5V
Height 2.1mm
Length 10.3mm
Width 4.4mm
Radiation Hardening No
RoHS Status RoHS Compliant

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